Fabrication of High Resolution n-type 4H-SiC Epitaxial Layer Alpha Particle Detectors, Defect Characterization and Electronic Noise Analysis

Author(s)

K. J. Zavalla
S. K. Chaudhuri
K. C. Mandal, University of South Carolina - ColumbiaFollow

Document Type

Article

Subject Area(s)

Electrical Engineering

Publication Info

Published in Proceedings of SPIE, Volume 8852, 2013.

© Proceedings of SPIE 2013, Society of Photo-optical Instrumentation Engineers

Zavalla, K. J., Chaudhuri, S. K., & Mandal, K. C. (2013). Fabrication of high resolution n-type 4H-SiC epitaxial layer alpha particle detectors, defect characterization and electronic noise analysis. Proceedings of SPIE, 8852.

http://dx.doi.org/10.1117/12.2027142

Rights

© Proceedings of SPIE 2013, Society of Photo-optical Instrumentation Engineers

Zavalla, K. J., Chaudhuri, S. K., & Mandal, K. C. (2013). Fabrication of high resolution n-type 4H-SiC epitaxial layer alpha particle detectors, defect characterization and electronic noise analysis. Proceedings of SPIE, 8852.

http://dx.doi.org/10.1117/12.2027142