Fabrication of High-Resolution Nuclear Detectors Using 4H-SiC n-type Epitaxial Layers

Author(s)

K. J. Zavalla
S. K. Chaudhuri
K. C. Mandal, University of South Carolina - ColumbiaFollow

Document Type

Article

Subject Area(s)

Electrical Engineering, Semiconduction

Publication Info

Published in MRS Online Proceedings Library, Volume 1576, 2013.

© MRS Online Proceedings Library 2013, Cambridge University Press

Zavalla, K. J., Chaudhuri, S. K., & Mandal, K. C. (2013). Fabrication of high-resolution nuclear detectors using 4H-SiC n-type epitaxial layers. MRS Online Proceedings Library, 1576.

http://dx.doi.org/10.1557/opl.2013.1195

Rights

© MRS Online Proceedings Library 2013, Cambridge University Press

Zavalla, K. J., Chaudhuri, S. K., & Mandal, K. C. (2013). Fabrication of high-resolution nuclear detectors using 4H-SiC n-type epitaxial layers. MRS Online Proceedings Library, 1576.

http://dx.doi.org/10.1557/opl.2013.1195