GaSe and GaTe Anisotropic Layered Semiconductors for Radiation Detectors

Author(s)

K. C. Mandal, University of South Carolina - ColumbiaFollow
M. Choi
S. H. Kang
R. D. Rauh
J. Wei
H. Zhang
L. Zheng
Y. Cui
M. Groza
A. Burger

Document Type

Article

Subject Area(s)

Electrical Engineering, Photo-optics

Publication Info

Published in SPIE Proceedings, Volume 6706, 2007, pages 67060E-1-67060E-10.

© SPIE Proceedings 2007, Society of Photo-optical Instrumentation Engineers

Mandal, K. C., Choi, M., Kang, S. H., Rauh, R. D., Wei, J., Zhang, H., Zheng, L., Cui, Y., Groza, M., & Burger, A. (21 September 2007). GaSe and GaTe anisotropic layered semiconductors for radiation detectors. SPIE Proceedings, 6706, 67060E-1-10.

http://dx.doi.org/10.1117/12.739399

Rights

© SPIE Proceedings 2007, Society of Photo-optical Instrumentation Engineers

Mandal, K. C., Choi, M., Kang, S. H., Rauh, R. D., Wei, J., Zhang, H., Zheng, L., Cui, Y., Groza, M., & Burger, A. (21 September 2007). GaSe and GaTe anisotropic layered semiconductors for radiation detectors. SPIE Proceedings, 6706, 67060E-1-10.

http://dx.doi.org/10.1117/12.739399