Component Overpressure Growth and Characterization of High-Resistivity CdTe Crystals for Radiation Detectors

Author(s)

K. C. Mandal, University of South Carolina - ColumbiaFollow
S. H. Kang
M. Choi
J. Wei
L. Zheng
H. Zhang
G. E. Jellison
M. Groza
A. Burger

Document Type

Article

Subject Area(s)

Electrical Engineering, Materials Science

Publication Info

Published in Journal of Electronic Materials, Volume 36, Issue 8, 2007, pages 1013-1020.

© Journal of Electronic Materials 2007, Springer

Mandal, K. C., Kang, S. H., Choi, M., Wei, J., Zheng, L., Zhang, H., Jellison, G. E., Groza, M., & Burger, A. (August 2007). Component overpressure growth and characterization of high-resistivity CdTe crystals for radiation detectors. Journal of Electronic Materials, 36(8), 1013-1020.

http://dx.doi.org/10.1007/s11664-007-0164-y

Rights

© Journal of Electronic Materials 2007, Springer

Mandal, K. C., Kang, S. H., Choi, M., Wei, J., Zheng, L., Zhang, H., Jellison, G. E., Groza, M., & Burger, A. (August 2007). Component overpressure growth and characterization of high-resistivity CdTe crystals for radiation detectors. Journal of Electronic Materials, 36(8), 1013-1020.

http://dx.doi.org/10.1007/s11664-007-0164-y