Low Energy X-Ray and ɣ-Ray Detectors Fabricated on n-Type 4H-SiC Epitaxial Layer

Author(s)

K. C. Mandal, University of South Carolina - ColumbiaFollow
P. G. Muzykov, University of South Carolina - ColumbiaFollow
S. K. Chaudhuri
J. R. Terry

Document Type

Article

Subject Area(s)

Nuclear Science, Electrical Engineering

Publication Info

Published in IEEE Transactions on Nuclear Science, Volume 60, Issue 4, 2013, pages 2888-2893.

© IEEE Transactions on Nuclear Science 2013, Institute of Electrical and Electronics Engineers

Mandal, K. C., Muzykov, P. G., Chaudhuri, S. K., & Terry, J. R. (8 August 2013). Low energy x-ray and ɣ-ray detectors fabricated on n-type 4H-SiC epitaxial layer. IEEE Transactions on Nuclear Science, 60(4), 2888-2893.

http://dx.doi.org/10.1109/TNS.2013.2273673

Rights

© IEEE Transactions on Nuclear Science 2013, Institute of Electrical and Electronics Engineers

Mandal, K. C., Muzykov, P. G., Chaudhuri, S. K., & Terry, J. R. (8 August 2013). Low energy x-ray and ɣ-ray detectors fabricated on n-type 4H-SiC epitaxial layer. IEEE Transactions on Nuclear Science, 60(4), 2888-2893.

http://dx.doi.org/10.1109/TNS.2013.2273673