Characterization of Semi-Insulating 4H Silicon Carbide for Radiation Detectors
Nuclear Science, Electrical Engineering
Published in IEEE Transactions on Nuclear Science, Volume 58, Issue 4, 2011, pages 1992-1999.
© IEEE Transactions on Nuclear Science 2011, Institute of Electrical and Electronics Engineers
Mandal, K. C., Krishna, R. M., Muzykov, P. G., Das, S., & Sudarshan, T. S. (9 June 2011). Characterization of semi-insulating 4H silicon carbide for radiation detectors. IEEE Transactions on Nuclear Science, 58(4), 1992-1999.