Thermally Stimulated Current and High Temperature Resistivity Measurements of 4H Semi-Insulating Silicon Carbide

Author(s)

K. C. Mandal, University of South Carolina - ColumbiaFollow
P. G. Muzykov, University of South Carolina - ColumbiaFollow
Ramesh Madhu Krishna, University of South CarolinaFollow
Timothy C. Hayes, University of South CarolinaFollow
Tangali S. Sudarshan, University of South Carolina - ColumbiaFollow

Document Type

Article

Subject Area(s)

Engineering, Materials Science, Physics

Publication Info

Published in Solid State Communications, Volume 151, Issue 7, 2011, pages 2027-2030.

© Solid State Communications 2011, Elsevier

Mandal, K. C., Muzykov, P. G., Krishna, R., Hayes, T., & Sudarshan, T. S. (April 2011). Thermally stimulated current and high temperature resistivity measurements of 4H semi-insulating silicon carbide. Solid State Communications, 151(7), 532-535.

http://dx.doi.org/10.1016/j.ssc.2011.01.019

Rights

© Solid State Communications 2011, Elsevier

Mandal, K. C., Muzykov, P. G., Krishna, R., Hayes, T., & Sudarshan, T. S. (April 2011). Thermally stimulated current and high temperature resistivity measurements of 4H semi-insulating silicon carbide. Solid State Communications, 151(7), 532-535.

http://dx.doi.org/10.1016/j.ssc.2011.01.019