Document Type
Article
Subject Area(s)
Engineering, Electrical Engineering
Publication Info
Published in Journal of Applied Physics, Volume 103, Issue 1, 2008, pages 013710-1-013710-4.
© Journal of Applied Physics 2008, American Institute of Physics
Cui, Y., Dupere, R., Burger, A., Johnstone, D., Mandal, K. C., & Payne, S. A. (1 January 2008). Acceptor levels in GaSe:In crystals investigated by deep-level transient spectroscopy and photoluminescence. Journal of Applied Physics, 103(1), #013710.
http://dx.doi.org/10.1063/1.2831130
http://scitation.aip.org/content/aip/journal/jap/103/1/10.1063/1.2831130
Rights
© Journal of Applied Physics 2008, American Institute of Physics
Cui, Y., Dupere, R., Burger, A., Johnstone, D., Mandal, K. C., & Payne, S. A. (1 January 2008). Acceptor levels in GaSe:In crystals investigated by deep-level transient spectroscopy and photoluminescence. Journal of Applied Physics, 103(1), #013710.
http://dx.doi.org/10.1063/1.2831130
http://scitation.aip.org/content/aip/journal/jap/103/1/10.1063/1.2831130