Highly Sensitive X-Ray Detectors in the Low-Energy Range on n-type 4H-SiC Epitaxial Layers

Author(s)

K. C. Mandal, University of South Carolina - ColumbiaFollow
P. G. Muzykov, University of South Carolina - ColumbiaFollow
J. R. Terry

Document Type

Article

Subject Area(s)

Engineering, Electrical Engineering

Publication Info

Published in Applied Physics Letters, Volume 101, Issue 5, 2012, pages 051111-1-051111-4.

© Applied Physics Letters 2012, American Institute of Physics

Mandal, K. C., Muzykov, P. G., & Terry, J. R. (30 July 2012). Highly sensitive x-ray detectors in the low-energy range on n-type 4H-SiC epitaxial layers. Applied Physics Letters, 101(5), #051111.

http://dx.doi.org/10.1063/1.4742741

http://scitation.aip.org/content/aip/journal/apl/101/5/10.1063/1.4742741

Rights

© Applied Physics Letters 2012, American Institute of Physics

Mandal, K. C., Muzykov, P. G., & Terry, J. R. (30 July 2012). Highly sensitive x-ray detectors in the low-energy range on n-type 4H-SiC epitaxial layers. Applied Physics Letters, 101(5), #051111.

http://dx.doi.org/10.1063/1.4742741

http://scitation.aip.org/content/aip/journal/apl/101/5/10.1063/1.4742741