Submilliwatt Operation of AlInGaN Based Multifinger-Design 315 nm Light Emitting Diode (LED) over Sapphire Substrate

Author(s)

Ashay Chitnis
Vinod AdivarahanFollow
Maxim Shatalov
Jianping Zhang
Michael Gaevski
Wu Shuai
Radhika Pachipulusu
Jason Sun
Kirll Simin
Grigory Simin, University of South Carolina - ColumbiaFollow
Jinwei Yang
Muhammad Asif Khan

Document Type

Article

Publication Info

Published in Japanese Journal of Applied Physics, Volume 41, Issue 2-#3B, 2002, pages L320-L322.

©Japanese Journal of Applied Physics 2002, Japanese Society of Applied Physics.

Chitnis, A., Adivarahan, V., Shatalov, M., Zhang, J., Gaevski, M., Shuai, W., Pachipulusu, R., Sun, J., Simin, K., Simin, G., Yang, J., & Khan, M. A. (March 2002). Submilliwatt Operation of AlInGaN Based Multifinger-Design 315 nm Light Emitting Diode (LED) over Sapphire Substrate. Japanese Journal of Applied Physics, 41 (2-#3B), L320-L322. http://dx.doi.org/10.1143/JJAP.41.L320

Rights

©Japanese Journal of Applied Physics 2002, Japanese Society of Applied Physics.

Chitnis, A., Adivarahan, V., Shatalov, M., Zhang, J., Gaevski, M., Shuai, W., Pachipulusu, R., Sun, J., Simin, K., Simin, G., Yang, J., & Khan, M. A. (March 2002). Submilliwatt Operation of AlInGaN Based Multifinger-Design 315 nm Light Emitting Diode (LED) over Sapphire Substrate. Japanese Journal of Applied Physics, 41 (2-#3B), L320-L322. http://dx.doi.org/10.1143/JJAP.41.L320