Stripe Geometry Ultraviolet Light Emitting Diodes at 305 Nanometers Using Quaternary AlInGaN Multiple Quantum Wells

Author(s)

Muhammad Asif Khan
Vinod AdivarahanFollow
Jian Ping Zhang
Changqing Chen
Edmundas Kuokstis
Ashay Chitnis
Maxim Shatalov
Jin Wei Yang
Grigory Simin, University of South Carolina - ColumbiaFollow

Document Type

Article

Publication Info

Published in Japanese Journal of Applied Physics, Issue 2-#12A, 2001, pages L1308-L1310.

©Japanese Journal of Applied Physics 2001, Japanese Society of Applied Physics.

Khan, M. A., Adivarahan, V., Zhang, J. P., Chen, C., Kuokstis, E., Chitnis, A., Shatalov, M., Yang, J. W., & Simin, G. (December 2001). Stripe Geometry Ultraviolet Light Emitting Diodes at 305 Nanometers using Quanternary AlInGaN Multiple Quantum Wells. Japanese Journal of Applied Physics, 40 (2-12A). L1308-L1310. http://dx.doi.org/10.1143/JJAP.40.L1308

Rights

©Japanese Journal of Applied Physics 2001, Japanese Society of Applied Physics.

Khan, M. A., Adivarahan, V., Zhang, J. P., Chen, C., Kuokstis, E., Chitnis, A., Shatalov, M., Yang, J. W., & Simin, G. (December 2001). Stripe Geometry Ultraviolet Light Emitting Diodes at 305 Nanometers using Quanternary AlInGaN Multiple Quantum Wells. Japanese Journal of Applied Physics, 40 (2-12A). L1308-L1310. http://dx.doi.org/10.1143/JJAP.40.L1308