AlGaN/GaN HEMTs on SiC with f_T of over 120 GHz

Author(s)

V. Kumar
W. Lu
R. Schwindt
A. Kuliev
Grigory Simin, University of South Carolina - ColumbiaFollow
J. Yang
M. Asif Khan
I. Adesida

Document Type

Article

Publication Info

Published in IEEE Electron Device Letters, Volume 23, Issue 8, 2002, pages 455-457.

©IEEE Electron Device Letters 2002, Institute of Electrical and Electronics Engineers (IEEE).

Kumar, V., Lu, W., Schwindt, R., Kuliev, A., Simin, G., Yang, J., Khan, A. M., & Adesida, I. (August 2002). AlGaN/GaN HEMTs on SiC with f_T of over 120 GHz. IEEE Electron Device Letters, 23 (8), 455-457. http://dx.doi.org/10.1109/LED.2002.801303

Rights

©IEEE Electron Device Letters 2002, Institute of Electrical and Electronics Engineers (IEEE).

Kumar, V., Lu, W., Schwindt, R., Kuliev, A., Simin, G., Yang, J., Khan, A. M., & Adesida, I. (August 2002). AlGaN/GaN HEMTs on SiC with f_T of over 120 GHz. IEEE Electron Device Letters, 23 (8), 455-457. http://dx.doi.org/10.1109/LED.2002.801303