Low-Loss High Power RF Switching using Multifinger AlGaN/GaN MOSHFETs

Author(s)

A. Koudymov
Xuhong Hu
K. Simin
Grigory Simin, University of South Carolina - ColumbiaFollow
M. Ali
J. Yang
M. Asif Khan

Document Type

Article

Publication Info

Published in IEEE Electron Device Letters, Volume 23, Issue 8, 2002, pages 449-451.

©IEEE Electron Device Letters 2002, Institute of Electrical and Electronics Engineers (IEEE).

Koudymov, A., Hu, X., Simin, G., Simin, G., Ali, M., Yang, J., & Khan, M. A. (August 2002). Low-Loss High Power RF Switching using Multifinger AlGaN/GaN MOSHFETs. IEEE Electron Device Letters, 23 (8), 449-451. http://dx.doi.org/10.1109/LED.2002.801301

Rights

©IEEE Electron Device Letters 2002, Institute of Electrical and Electronics Engineers (IEEE).

Koudymov, A., Hu, X., Simin, G., Simin, G., Ali, M., Yang, J., & Khan, M. A. (August 2002). Low-Loss High Power RF Switching using Multifinger AlGaN/GaN MOSHFETs. IEEE Electron Device Letters, 23 (8), 449-451. http://dx.doi.org/10.1109/LED.2002.801301