Mobility Enhancement in AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors

Author(s)

M. E. Levinshtein
P. A. Ivanov
M. Asif Khan
Grigory Simin, University of South Carolina - ColumbiaFollow
J. Zhang
X. Hu
J. Yang

Document Type

Article

Publication Info

Published in Semiconductor Science and Technology, Volume 18, Issue 7, 2003, pages 666-669.

©Semiconductor Science and Technology 2003, Institute of Physics Publishing.

Levinshtein, M. E., Ivanov, P. A., Khan, M. A., Simin, G., Zhang, J., Hu, X., & Yang, J. (3 June 2003). Mobility Enhancement in AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors. Semiconductor Science and Technology, 18 (7), 666-669. http://dx.doi.org/10.1088/0268-1242/18/7/311

Rights

©Semiconductor Science and Technology 2003, Institute of Physics Publishing.

Levinshtein, M. E., Ivanov, P. A., Khan, M. A., Simin, G., Zhang, J., Hu, X., & Yang, J. (3 June 2003). Mobility Enhancement in AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors. Semiconductor Science and Technology, 18 (7), 666-669. http://dx.doi.org/10.1088/0268-1242/18/7/311