Cryogenic RF Switch using III-Nitride MOSHFETs

Author(s)

Grigory Simin, University of South Carolina - ColumbiaFollow
A. Koudymov
Z. Yang
X. Hu
J. Yang
M. Shur
R. Gaska

Document Type

Article

Publication Info

Published in Electronics Letters, Volume 45, Issue 4, 2009, pages 207-208.

©Electronics Letters 2009, The Institution of Engineering and Technology.

Simin, G., Koudymov, A., Yang, Z., Hu, X., Yang, J., Shur, M., & Gaska, R. (12 February 2009). Cryogenic RF Switch using III-Nitride MOSHFETs. Electronics Letters, 45 (4), 207 – 208. http://dx.doi.org/10.1049/el:20092562

Rights

©Electronics Letters 2009, The Institution of Engineering and Technology.

Simin, G., Koudymov, A., Yang, Z., Hu, X., Yang, J., Shur, M., & Gaska, R. (12 February 2009). Cryogenic RF Switch using III-Nitride MOSHFETs. Electronics Letters, 45 (4), 207 – 208. http://dx.doi.org/10.1049/el:20092562