Cryogenic RF Switch using III-Nitride MOSHFETs
Document Type
Article
Publication Info
Published in Electronics Letters, Volume 45, Issue 4, 2009, pages 207-208.
Rights
©Electronics Letters 2009, The Institution of Engineering and Technology.
Simin, G., Koudymov, A., Yang, Z., Hu, X., Yang, J., Shur, M., & Gaska, R. (12 February 2009). Cryogenic RF Switch using III-Nitride MOSHFETs. Electronics Letters, 45 (4), 207 – 208. http://dx.doi.org/10.1049/el:20092562
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