7.5 kW/mm² Current Swith using AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates

Author(s)

Grigory Simin, University of South Carolina - ColumbiaFollow
X. Hu
N. Ilinskaya
A. Kumar
A. Koudymov
J. Zhang
M. A. Khan
R. Gaska
M. S. Shur

Document Type

Article

Publication Info

Published in Electronics Letters, Volume 36, Issue 24, 2000, pages 2043-2044.

©Electronics Letters 2000, The Institution of Engineering and Technology.

Simin, G., Hu, X., Ilinskaya, N., Kumar, A., Koudymov, A., Zhang, J., Khan, M. A., Gaska, R. & Shur, M. S. (23 November 2000). 7.5 kW/mm² Current Swith using AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates. Electronics Letters, 36 (24), 2043-2044. http://dx.doi.org/10.1049/el:20001401

Rights

©Electronics Letters 2000, The Institution of Engineering and Technology.

Simin, G., Hu, X., Ilinskaya, N., Kumar, A., Koudymov, A., Zhang, J., Khan, M. A., Gaska, R. & Shur, M. S. (23 November 2000). 7.5 kW/mm² Current Swith using AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates. Electronics Letters, 36 (24), 2043-2044. http://dx.doi.org/10.1049/el:20001401