Low Frequency Noise in Gallium Nitride Field Effect Transistors

Author(s)

S. L. Rumyantsev
M. S. Shur
R. Gaska
M. E. Levinshtein
M. Asif Khan
Grigory Simin, University of South Carolina - ColumbiaFollow
J. W. Yang

Document Type

Article

Publication Info

Published in International Journal of High Speed Electronics and Systems, Volume 12, Issue 20, 2002, pages 449-458.

©International Journal of High Speed Electronics and Systems 2002, World Scientific Publishing.

Rumyantsev, S. L., Shur, M. S., Gaska, R., Levinshtein, M. E., Khan, M. A., Simin, G., & Yang, J. W. (June 2002). Low Frequency Noise in Gallium Nitride Field Effect Transistors. International Journal of High Speed Electronics and Systems, 12 (2), 449-458. http://dx.doi.org/10.1142/S012915640200137X

Rights

©International Journal of High Speed Electronics and Systems 2002, World Scientific Publishing.

Rumyantsev, S. L., Shur, M. S., Gaska, R., Levinshtein, M. E., Khan, M. A., Simin, G., & Yang, J. W. (June 2002). Low Frequency Noise in Gallium Nitride Field Effect Transistors. International Journal of High Speed Electronics and Systems, 12 (2), 449-458. http://dx.doi.org/10.1142/S012915640200137X