Selectively Doped High-Power AlGaN/InGaN/GaN MOS-DHFET

Author(s)

V. AdivarahanFollow
M. Gaevski
A. Koudymov
J. Yang
Grigory Simin, University of South Carolina - ColumbiaFollow
M. Asif Khan

Document Type

Article

Publication Info

Published in IEEE Electron Device Letters, Volume 28, Issue 3, 2007, pages 192-194.

©IEEE Electron Device Letters 2007, Institute of Electrical and Electronics Engineers (IEEE).

Adivarahan, V., Gaevski, M., Koudymov, A., Yang, J., Simin, G., & Khan, M. A. (March 2007). Selectively Doped High-Power AlGaN/InGaN/GaN MOS-DHFET. IEEE Electron Device Letters, 28 (3), 192-194. http://dx.doi.org/10.1109/LED.2007.891386

Rights

©IEEE Electron Device Letters 2007, Institute of Electrical and Electronics Engineers (IEEE).

Adivarahan, V., Gaevski, M., Koudymov, A., Yang, J., Simin, G., & Khan, M. A. (March 2007). Selectively Doped High-Power AlGaN/InGaN/GaN MOS-DHFET. IEEE Electron Device Letters, 28 (3), 192-194. http://dx.doi.org/10.1109/LED.2007.891386