Monolithically Integrated High-Power Broad-Band RF Switch Based on III-N Insulated Gate Transistors

Author(s)

A. Koudymov
S. Rai
V. AdivarahanFollow
M. Gaevski
J. Yang
Grigory Simin, University of South Carolina - ColumbiaFollow
M. A. Khan

Document Type

Article

Publication Info

Published in IEEE Microwave and Wireless Components Letters, Volume 14, Issue 12, 2004, pages 560-562.

©IEEE Microwave and Wireless Components Letters 2004, Institute of Electrical and Electronics Engineers (IEEE).

Koudymov, A., Rai, S., Adivarahan, V., Gaevski, M., Yang, J., Simin, G., & Khan, M. A. (December 2004). Monolithically Integrated High-Power Broad-Band RF Switch Based on III-N Insulated Gate Transistors. IEEE Microwave and Wireless Components Letters, 14 (12), 560-562. http://dx.doi.org/10.1109/LMWC.2004.837381

Rights

©IEEE Microwave and Wireless Components Letters 2004, Institute of Electrical and Electronics Engineers (IEEE).

Koudymov, A., Rai, S., Adivarahan, V., Gaevski, M., Yang, J., Simin, G., & Khan, M. A. (December 2004). Monolithically Integrated High-Power Broad-Band RF Switch Based on III-N Insulated Gate Transistors. IEEE Microwave and Wireless Components Letters, 14 (12), 560-562. http://dx.doi.org/10.1109/LMWC.2004.837381