Title

Wide Bandgap Devices with Non-Ohmic Contacts

Document Type

Article

Abstract

The paper proposes a novel approach to fabricate high performance microwave devices with non-ohmic contacts. Low contact impedance is achieved through a strong capacitive coupling between the metal electron and the high-density two- dimensional electron gas. This approach allows for a new device design with non-annealed or low-temperature annealed contacts and gate alignment-free technology. The application of capacitively coupled contacts for high-power microwave devices is demonstrated.

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