We report on simulations of electrical characteristics of AlGaN/(InGaN)/GaN heterostructurefield effect transistors with quantum and hot electroneffects taken into account. Polarization charges lead to quantum confinement of electrons in the channel and to the formation of two-dimensional electron gas. The electron quantization leads to the spread of the electronwave function into the barrier and bulk but does not have significant impact on dc electrical characteristics.Hot electrons play an important part in the charge transport by spilling over into the bulk GaN where they are captured by traps. This leads to negative differential conductivity, which is also observed experimentally. The simulation results are in good agreement with measured dccharacteristics.
Published in Journal of Applied Physics, Volume 95, Issue 11, 2004, pages 6409-6413.
©Journal of Applied Physics 2004, American Institute of Physics (AIP).
Braga, N., Mickevicius, R., Gaska, R., Hu, X., Shur, M. S., Khan, M. A., Simin, G., & Yang, J. (1 June 2004). Simulation of Hot Electron and Quantum Effects in AlGaN/GaN Heterostructure Field Effect Transistors. Journal of Applied Physics, 95(11), 6409-6413. http://dx.doi.org/10.1063/1.1719262