We report homoepitaxialGaNgrowth on freestanding (11̄00) oriented (M-plane GaN) substrates using low-pressure metalorganic chemical vapor deposition.Scanning electron microscopy,atomic-force microscopy, and photoluminescence were used to study the influence of growth conditions such as the V/III molar ratio and temperature on the surface morphology and optical properties of the epilayers. Optimized growth conditions led to high quality (11̄00) oriented GaN epilayers with a smooth surface morphology and strong band-edge emission. These layers also exhibited strong room temperature stimulated emission under high intensity pulsed optical pumping. Since for III-N materials the (11̄00) crystal orientation is free from piezoelectric or spontaneous polarization electric fields, our work forms the basis for developing high performance III-N optoelectronic devices.
Published in Applied Physics Letters, Volume 81, Issue 17, 2002, pages 3194-3196.
©Applied Physics Letters 2002, American Institute of Physics (AIP).
Chen, C. Q., Gaevski, M. E., Sun, W. H., Kuokstis, E., Zhang, J. P., Fareed, R. S. Q., Wang, H. M., Yang, J. W., Simin, G., Khan, M. A., Maruska, H-P., Hill, D. W., Chou, M. M. C., & Chai, B. (21 October 2002). GaN Homoepitaxy on Freestanding (1100) Oriented GaN Substrates. Applied Physics Letters, 81 (17), 3194-3196. http://dx.doi.org/10.1063/1.1516230