https://doi.org/10.1063/1.124041

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An Ohmic Nanocontact To GaAs

Document Type

Article

Subject Area(s)

Engineering, Chemical Engineering, Catalysis and Reaction Engineering, Membrane Science

Abstract

The formation and characterization of nanometer-size, ohmic contacts to n" role="presentation" style="box-sizing: border-box; display: inline; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; color: rgb(51, 51, 51); font-family: Arial, sans-serif; position: relative;">nn-type GaAs substrates are described. The nanocontacts are formed between a single-crystalline, nanometer-size Au cluster and a GaAs structure capped with layer of low-temperature-grown GaAs (LTG:GaAs). An organic monolayer of xylyl dithiol (p" role="presentation" style="box-sizing: border-box; display: inline; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; color: rgb(51, 51, 51); font-family: Arial, sans-serif; position: relative;">(p(p-xylene-α,α′" role="presentation" style="box-sizing: border-box; display: inline; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; color: rgb(51, 51, 51); font-family: Arial, sans-serif; position: relative;">α,α′α,α′- dithiol; C8H10S2)" role="presentation" style="box-sizing: border-box; display: inline; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; color: rgb(51, 51, 51); font-family: Arial, sans-serif; position: relative;">C8H10S2)C8H10S2) provides mechanical and electronic tethering of the Au cluster to the LTG:GaAs surface. The I(V)" role="presentation" style="box-sizing: border-box; display: inline; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; color: rgb(51, 51, 51); font-family: Arial, sans-serif; position: relative;">I(V)I(V) data of the Au cluster/xylyl dithiol/GaAs show ohmic contact behavior with good repeatability between various clusters distributed across the surface. The specific contact resistance is determined to be 1×10−6" role="presentation" style="box-sizing: border-box; display: inline; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; color: rgb(51, 51, 51); font-family: Arial, sans-serif; position: relative;">1×10−61×10−6 Ω cm2." role="presentation" style="box-sizing: border-box; display: inline; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; color: rgb(51, 51, 51); font-family: Arial, sans-serif; position: relative;">Ω cm2.Ω cm2.Current densities above 1×106" role="presentation" style="box-sizing: border-box; display: inline; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; color: rgb(51, 51, 51); font-family: Arial, sans-serif; position: relative;">1×1061×106 A/cm2" role="presentation" style="box-sizing: border-box; display: inline; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; color: rgb(51, 51, 51); font-family: Arial, sans-serif; position: relative;">A/cm2A/cm2 have been observed.

Digital Object Identifier (DOI)

https://doi.org/10.1063/1.124041

Rights

© Applied Physics Letters, 1999, American Institute of Physics

APA Citation

Lee, T., Liu, J., Janes, B.D., Kolagunta, R.V., Dicke, J., Andres, P.R., Lauterbach, A.J., Melloch, R.M., McInturff, D., Woodfall, M.J., Reifenberger, R. (1999). An ohmic nanocontact to GaAs. Applied Physics Letter, 74(19), 2869-2871

http://doi.org/10.1063/1.124041

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