An Ohmic Nanocontact To GaAs
Document Type
Article
Subject Area(s)
Engineering, Chemical Engineering, Catalysis and Reaction Engineering, Membrane Science
Abstract
The formation and characterization of nanometer-size, ohmic contacts to n" role="presentation" style="box-sizing: border-box; display: inline; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; color: rgb(51, 51, 51); font-family: Arial, sans-serif; position: relative;">nn-type GaAs substrates are described. The nanocontacts are formed between a single-crystalline, nanometer-size Au cluster and a GaAs structure capped with layer of low-temperature-grown GaAs (LTG:GaAs). An organic monolayer of xylyl dithiol (p" role="presentation" style="box-sizing: border-box; display: inline; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; color: rgb(51, 51, 51); font-family: Arial, sans-serif; position: relative;">(p(p-xylene-α,α′" role="presentation" style="box-sizing: border-box; display: inline; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; color: rgb(51, 51, 51); font-family: Arial, sans-serif; position: relative;">α,α′α,α′- dithiol; C8H10S2)" role="presentation" style="box-sizing: border-box; display: inline; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; color: rgb(51, 51, 51); font-family: Arial, sans-serif; position: relative;">C8H10S2)C8H10S2) provides mechanical and electronic tethering of the Au cluster to the LTG:GaAs surface. The I(V)" role="presentation" style="box-sizing: border-box; display: inline; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; color: rgb(51, 51, 51); font-family: Arial, sans-serif; position: relative;">I(V)I(V) data of the Au cluster/xylyl dithiol/GaAs show ohmic contact behavior with good repeatability between various clusters distributed across the surface. The specific contact resistance is determined to be 1×10−6" role="presentation" style="box-sizing: border-box; display: inline; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; color: rgb(51, 51, 51); font-family: Arial, sans-serif; position: relative;">1×10−61×10−6 Ω cm2." role="presentation" style="box-sizing: border-box; display: inline; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; color: rgb(51, 51, 51); font-family: Arial, sans-serif; position: relative;">Ω cm2.Ω cm2.Current densities above 1×106" role="presentation" style="box-sizing: border-box; display: inline; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; color: rgb(51, 51, 51); font-family: Arial, sans-serif; position: relative;">1×1061×106 A/cm2" role="presentation" style="box-sizing: border-box; display: inline; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; color: rgb(51, 51, 51); font-family: Arial, sans-serif; position: relative;">A/cm2A/cm2 have been observed.
Digital Object Identifier (DOI)
Publication Info
Published in Applied Physics Letters, Volume 74, Issue 19, 1999, pages 2869-2871.
Rights
© Applied Physics Letters, 1999, American Institute of Physics
APA Citation
Lee, T., Liu, J., Janes, B.D., Kolagunta, R.V., Dicke, J., Andres, P.R., Lauterbach, A.J., Melloch, R.M., McInturff, D., Woodfall, M.J., Reifenberger, R. (1999). An ohmic nanocontact to GaAs. Applied Physics Letter, 74(19), 2869-2871